Electrostatic Potentials at Cu(In,Ga)Se2Grain Boundaries: Experiment and Simulations
نویسندگان
چکیده
منابع مشابه
Electrostatic potentials at Cu(In,Ga)Se2 grain boundaries: experiment and simulations.
In the present Letter, we report on a combined ab initio density functional theory calculation, multislice simulation, and electron holography study, performed on a Σ9 grain boundary (GB) in a CuGaSe2 bicrystal, which exhibits a lower symmetry compared with highly symmetric Σ3 GBs. We find an electrostatic potential well at the Σ9 GB of 0.8 V in depth and 1.3 nm in width, which in comparison wi...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2012
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.109.095506